In the relentless pursuit of efficiency and precision in semiconductor manufacturing, a groundbreaking study has emerged from the labs of Nanjing University of Aeronautics and Astronautics. Led by Pengfei Wu, a researcher at the College of Mechanical and Electrical Engineering, the study delves into the intricate world of electrochemical mechanical polishing (ECMP) of 4H–SiC, a material crucial for high-power and high-frequency electronic devices. The findings, published in the Journal of Materials Research and Technology, could revolutionize the way we process semiconductors, particularly in the energy sector.
4H–SiC, a type of silicon carbide, is prized for its exceptional properties, including high thermal conductivity and excellent electrical resistance. However, polishing this material to achieve the required surface quality has been a challenge. Traditional methods often fall short, leading to inefficiencies and suboptimal performance. This is where Wu’s research comes in.
The study employs a fixed agglomerated diamond abrasive pad (FADAP) to enhance the processing efficiency and surface quality of 4H–SiC. By investigating the effects of voltage on various parameters during the ECMP process, Wu and his team have provided valuable insights for process optimization. “The key is to understand how voltage affects the material removal rate and surface roughness,” Wu explains. “By doing so, we can fine-tune the process to achieve the best possible results.”
The research involved conducting polishing experiments on 4H–SiC using a slurry composed of sodium nitrate and hydrogen peroxide. The team measured and analyzed variations in real-time current density, interface resistance, material removal rate (MRR), and surface roughness within a voltage range of 0–9 volts. The results were striking. As the voltage increased, both real-time current density and interface resistance rose, albeit at a decreasing rate. The MRR improved significantly, from 20.736 micrometers per hour to 25.261 micrometers per hour, representing a 22% increase compared to the no-voltage condition.
Moreover, the study observed a linear correlation between current density and MRR, while the surface roughness gradually decreased and stabilized at approximately 23 nanometers. This level of precision is crucial for semiconductor manufacturing, where even the slightest imperfection can lead to device failure.
The implications of this research are far-reaching, particularly for the energy sector. High-power and high-frequency electronic devices, which are essential for renewable energy systems and electric vehicles, often rely on 4H–SiC. By optimizing the ECMP process, manufacturers can produce more efficient and reliable devices, ultimately driving down costs and improving performance.
Wu’s work also sheds light on the mechanism by which voltage enhances MRR in ECMP. By analyzing the effects of voltage on the electronic activation energy of the 4H–SiC surface and the electro-Fenton reaction in the polishing slurry, the team has elucidated a complex process that could pave the way for future developments.
The study, published in the Journal of Materials Research and Technology, provides systematic theoretical and experimental support for 4H–SiC ECMP. It contributes to the optimization of process parameters and the improvement of semiconductor processing quality, offering a glimpse into the future of semiconductor manufacturing.
As the demand for high-power and high-frequency electronic devices continues to grow, so too will the need for efficient and precise semiconductor processing. Wu’s research is a significant step forward in this direction, offering a roadmap for manufacturers to achieve the levels of precision and efficiency required for the energy sector. The future of semiconductor manufacturing is bright, and it’s powered by innovations like these.